Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition

InAs/GaSb type-II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition. Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like and mixed-like (plane of mixed As and Sb atoms that connect the GaSb and InAs layers) interfaces. Introducing the InSb-like interface results in nanopipes and As contamination of the GaSb layers. X-ray diffraction and atomic force microscopy demonstrate that the superlattices with a mixed-like interface have better morphology and crystalline quality.