Development of Vertical Buffered Electropolishing for Its Post-Treatment Technology on 1.5 GHz Niobium SRF Cavities
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Abstract
We report the latest research development of vertical buffered electropolishing on its post-treatment procedure as well as the effects of several major post-treatment techniques for buffered electropolishing (BEP) processed 1.5 GHz niobium (Nb) superconducting radio frequency (SRF) cavities. With the established post-treatment procedure, an accelerating gradient of 28.4 MV/m is obtained on a single cell cavity of the cebaf shape. This is the best result in the history of BEP development. The cavity is limited by quench with a high quality factor over 1.2×1010 at the quench point. Analyses from optical inspection and temperature-mapping show that the quench should be originated from the pits that were already present on the cavity before this BEP treatment. All of these factors indicate that this procedure will have a great potential to produce better results if cavities without intrinsic performance limiting imperfections are used.
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JIN Song, A. T. Wu, LU Xiang-Yang, R. A. Rimmer, LIN Lin, ZHAO Kui. Development of Vertical Buffered Electropolishing for Its Post-Treatment Technology on 1.5 GHz Niobium SRF Cavities[J]. Chin. Phys. Lett., 2011, 28(11): 112901. DOI: 10.1088/0256-307X/28/11/112901
JIN Song, A. T. Wu, LU Xiang-Yang, R. A. Rimmer, LIN Lin, ZHAO Kui. Development of Vertical Buffered Electropolishing for Its Post-Treatment Technology on 1.5 GHz Niobium SRF Cavities[J]. Chin. Phys. Lett., 2011, 28(11): 112901. DOI: 10.1088/0256-307X/28/11/112901
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JIN Song, A. T. Wu, LU Xiang-Yang, R. A. Rimmer, LIN Lin, ZHAO Kui. Development of Vertical Buffered Electropolishing for Its Post-Treatment Technology on 1.5 GHz Niobium SRF Cavities[J]. Chin. Phys. Lett., 2011, 28(11): 112901. DOI: 10.1088/0256-307X/28/11/112901
JIN Song, A. T. Wu, LU Xiang-Yang, R. A. Rimmer, LIN Lin, ZHAO Kui. Development of Vertical Buffered Electropolishing for Its Post-Treatment Technology on 1.5 GHz Niobium SRF Cavities[J]. Chin. Phys. Lett., 2011, 28(11): 112901. DOI: 10.1088/0256-307X/28/11/112901
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