The Preparation and Characteristics of In_xGa_1−xN (0.06≤x≤0.58) Films Deposited by ECR-PEMOCVD

We investigate the structural property and surface morphology of In_xGa_1−xN films for In compositions ranging from 0.06 to 0.58, which are deposited by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The results of x-ray diffraction (XRD) in InGaN films confirm that they have excellent c−axis orientation. The In content in the InGaN epilayers is checked by electron probe microanalysis (EPMA), which reveals that In fractions determined by XRD are in good agreement with the EPMA results. Atomic force microscopy measurements reveal that the grown films have a surface roughness that varies between 4.16 and 8.14 nm. The results suggest that it is possible to deposit high-c-axis-orientation InGaN films with different In contents.