The Fabrication and Characterization of Well Aligned Petal-Like Arsenic-Doped Zinc Oxide Microrods

Arsenic-doped petal-like zinc oxide microrods are grown on silicon (100) substrates by the chemical vapor deposition method without the use of catalysts. Scanning electron microscopy shows that As-doped petal-like ZnO microrods with a preferred c−axial orientation are obtained, which is well in accordance with x-ray diffraction analysis. The obtained ZnO microrods have uniform lengths of about 2 µm and side lengths of about 100 nm. As-related acceptor emissions are observed from photoluminescence spectra of the ZnO microrods at a temperature of 11 K. The acceptor binding energy is estimated to be 128 meV.