Electrical Characteristics of High-Performance ZnO Field-Effect Transistors Prepared by Ultrasonic Spray Pyrolysis Technique

We have fabricated ZnO-based thin-film transistors (TFTs) by low-cost ultrasonic spray pyrolysis. The devices exhibit high saturation mobility of about 0.6 cm²/Vs and on−off current ratio of 10⁵. The electrical characteristics of ZnO-based TFTs show that ultrasonic spray pyrolysis technique can be used as a promising approach to attain high-performance electronic devices. Furthermore, the deposition techniques make the operating process attractive for flexible electronics.