Flashover in Back-Triggered Photoconductive Semiconductor Switch
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Abstract
Design of a new type of photoconductive semiconductor switches (PCSSs) is presented, and the withstand voltage is improved. The flashover voltage of the back-triggered PCSS is found to be higher than that of the front-triggered one. By analyzing the differences of the flashover voltage between the back-triggered PCSS and the front-triggered PCSS, a detailed statistics analysis and theoretical explanation are expounded. The experiments also prove that the PCSS we developed could resist a voltage as high as 20 kV under the repetition frequency of 30 Hz.
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SHI Wei, JIA Ji-Qiang, JI Wei-Li, GUI Huai-Meng. Flashover in Back-Triggered Photoconductive Semiconductor Switch[J]. Chin. Phys. Lett., 2011, 28(1): 014205. DOI: 10.1088/0256-307X/28/1/014205
SHI Wei, JIA Ji-Qiang, JI Wei-Li, GUI Huai-Meng. Flashover in Back-Triggered Photoconductive Semiconductor Switch[J]. Chin. Phys. Lett., 2011, 28(1): 014205. DOI: 10.1088/0256-307X/28/1/014205
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SHI Wei, JIA Ji-Qiang, JI Wei-Li, GUI Huai-Meng. Flashover in Back-Triggered Photoconductive Semiconductor Switch[J]. Chin. Phys. Lett., 2011, 28(1): 014205. DOI: 10.1088/0256-307X/28/1/014205
SHI Wei, JIA Ji-Qiang, JI Wei-Li, GUI Huai-Meng. Flashover in Back-Triggered Photoconductive Semiconductor Switch[J]. Chin. Phys. Lett., 2011, 28(1): 014205. DOI: 10.1088/0256-307X/28/1/014205
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