Molecular Dynamical Simulations on a-C:H Film Growth from C and H Atomic Flux: Effect of Incident Energy

Molecular dynamical simulation is carried out to investigate the effects of the incident energy on a-C:H film growth from C and H atomic flux. Our simulations show that the film growth at low incident energy (1 eV) is dominated by the adsorption of H and C atoms. At moderate incident energy (10 and 20 eV), the abstraction reaction of incident H atoms with H atoms adsorbed at the surface becomes important. At high incident energy (30 and 40 eV), the a-C:H film growth is a two-step process: one is the adsorption and the shallow implantation of C atoms, and the other is the deep implantation of H atoms.