Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions
-
Abstract
In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 (LSCO) films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction Vd-on change clearly with varying film thickness. Vd-on and TC coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin (<350 nm) a departure between the two parameters was also observed. A possible reason for this is discussed within the framework of an inhomogeneous Schottky contact. Enhanced interface inhomogeneity due to the tensile strain appears to be the origin.
Article Text
-
-
-
About This Article
Cite this article:
CHEN Lei-Ming, LI Guang-Cheng, ZHANG Yan, GUO Yan-Feng. Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions[J]. Chin. Phys. Lett., 2010, 27(7): 077401. DOI: 10.1088/0256-307X/27/7/077401
CHEN Lei-Ming, LI Guang-Cheng, ZHANG Yan, GUO Yan-Feng. Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions[J]. Chin. Phys. Lett., 2010, 27(7): 077401. DOI: 10.1088/0256-307X/27/7/077401
|
CHEN Lei-Ming, LI Guang-Cheng, ZHANG Yan, GUO Yan-Feng. Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions[J]. Chin. Phys. Lett., 2010, 27(7): 077401. DOI: 10.1088/0256-307X/27/7/077401
CHEN Lei-Ming, LI Guang-Cheng, ZHANG Yan, GUO Yan-Feng. Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions[J]. Chin. Phys. Lett., 2010, 27(7): 077401. DOI: 10.1088/0256-307X/27/7/077401
|