Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO₂ Dielectric

Deep-trap properties of high-dielectric-constant (k) HfO₂ thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO₂ dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500 K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5 eV, 1.8× 10^-16 cm² and 1.0× 10¹⁶ cm^-3, respectively.