A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure

We report a novel charge-trap memory device with a composition-modulated Zr-silicate high-k dielectric multilayer structure prepared by using the pulsed laser deposition technique. The device employs amorphous (ZrO₂)_0.5(SiO₂)_0.5 as the tunneling and blocking oxide layers, and ZrO₂ nanocrystals as the trapping storage layer. ZrO₂ nanocrystals are precipitated from the phase separation of (ZrO₂)_0.8(SiO₂)_0.2 films annealed at 800\circC, and isolated from each other within the amorphous (ZrO₂)_0.5(SiO₂)_0.5 matrix. Our charge trapping device shows a memory window of 2.6 V and a stored electron density of 1×10¹³/cm².