Extrinsic Base Surface Passivation in High Speed “Type-II'” GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure

Type-Ⅱ GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20 nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency ƒT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications.