Optical Properties of Zinc-Blende InGaN/GaN Quantum Well Structures and Comparison with Experiment
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Abstract
Optical properties of zinc-blende InGaN/GaN QW structures are investigated using the multiband effective-mass theory. The transition wavelength values at 300 K ranged from 440 to 570 nm in the investigated range of the In composition and the well width. The theoretical wavelengths show reasonable agreement with the experimental results. The optical gain decreases with the increasing well width. This is mainly due to the reduction in the quasi-Fermi-level separation because the optical matrix element increases with the well width.
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PARK Seoung-Hwan, LEE Yong-Tak. Optical Properties of Zinc-Blende InGaN/GaN Quantum Well Structures and Comparison with Experiment[J]. Chin. Phys. Lett., 2010, 27(4): 044208. DOI: 10.1088/0256-307X/27/4/044208
PARK Seoung-Hwan, LEE Yong-Tak. Optical Properties of Zinc-Blende InGaN/GaN Quantum Well Structures and Comparison with Experiment[J]. Chin. Phys. Lett., 2010, 27(4): 044208. DOI: 10.1088/0256-307X/27/4/044208
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PARK Seoung-Hwan, LEE Yong-Tak. Optical Properties of Zinc-Blende InGaN/GaN Quantum Well Structures and Comparison with Experiment[J]. Chin. Phys. Lett., 2010, 27(4): 044208. DOI: 10.1088/0256-307X/27/4/044208
PARK Seoung-Hwan, LEE Yong-Tak. Optical Properties of Zinc-Blende InGaN/GaN Quantum Well Structures and Comparison with Experiment[J]. Chin. Phys. Lett., 2010, 27(4): 044208. DOI: 10.1088/0256-307X/27/4/044208
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