Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
-
Abstract
We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density.
Article Text
-
-
-
About This Article
Cite this article:
WANG Hui, LIANG Hu, WANG Yong, NG Kar-Wei, DENG Dong-Mei, LAU Kei-May. Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)[J]. Chin. Phys. Lett., 2010, 27(3): 038103. DOI: 10.1088/0256-307X/27/3/038103
WANG Hui, LIANG Hu, WANG Yong, NG Kar-Wei, DENG Dong-Mei, LAU Kei-May. Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)[J]. Chin. Phys. Lett., 2010, 27(3): 038103. DOI: 10.1088/0256-307X/27/3/038103
|
WANG Hui, LIANG Hu, WANG Yong, NG Kar-Wei, DENG Dong-Mei, LAU Kei-May. Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)[J]. Chin. Phys. Lett., 2010, 27(3): 038103. DOI: 10.1088/0256-307X/27/3/038103
WANG Hui, LIANG Hu, WANG Yong, NG Kar-Wei, DENG Dong-Mei, LAU Kei-May. Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)[J]. Chin. Phys. Lett., 2010, 27(3): 038103. DOI: 10.1088/0256-307X/27/3/038103
|