Diode Pumped Operation of Tm,Ho:YVO₄ Microchip Laser

A cryogenic and room-temperature diode pumped Tm,Ho:YVO₄ microchip laser with 0.5 mm crystal length lasing around 2μm is demonstrated for the first time to our knowledge. Under cryogenic temperature of 77 K, as much as 1.2 W output and slope efficiency of 35% with respect to absorbed pump power are obtained. At temperature of 5ºC the maximum output power of 48mW is obtained at an absorbed pump power of 503 mW, representing a 9.5% optical to optical conversion efficiency. In addition, as much as 8 mW single-frequency output lasing at 2052.6 nm is achieved at room temperature of 15ºC.