Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions

Flexible vanadyl-phthalocyanine (VOPc) thin-film transistors are fabricated by the weak epitaxy growth (WEG) method. The devices show a mobility of 0.5 cm²/Vs, an on/off ratio of 10⁵ and a low leakage current of 10^-9 A. The performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. This results from the change of the trap density calculated by subthreshold slopes. The results indicate that VOPc films fabricated by the WEG method have good durability to flexing and possess great potential in flexible electronics.