Electrical Property of Infrared-Sensitive InAs Solar Cells
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Abstract
InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p−n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.
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DENG Hui-Yong, WANG Qi-Wei, TAO Jun-Chao, WU Jie, HU Shu-Hong, CHEN Xin, DAI Ning. Electrical Property of Infrared-Sensitive InAs Solar Cells[J]. Chin. Phys. Lett., 2010, 27(11): 114206. DOI: 10.1088/0256-307X/27/11/114206
DENG Hui-Yong, WANG Qi-Wei, TAO Jun-Chao, WU Jie, HU Shu-Hong, CHEN Xin, DAI Ning. Electrical Property of Infrared-Sensitive InAs Solar Cells[J]. Chin. Phys. Lett., 2010, 27(11): 114206. DOI: 10.1088/0256-307X/27/11/114206
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DENG Hui-Yong, WANG Qi-Wei, TAO Jun-Chao, WU Jie, HU Shu-Hong, CHEN Xin, DAI Ning. Electrical Property of Infrared-Sensitive InAs Solar Cells[J]. Chin. Phys. Lett., 2010, 27(11): 114206. DOI: 10.1088/0256-307X/27/11/114206
DENG Hui-Yong, WANG Qi-Wei, TAO Jun-Chao, WU Jie, HU Shu-Hong, CHEN Xin, DAI Ning. Electrical Property of Infrared-Sensitive InAs Solar Cells[J]. Chin. Phys. Lett., 2010, 27(11): 114206. DOI: 10.1088/0256-307X/27/11/114206
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