High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

We fabricate 1.5 μm InGaAsP/InP tunnel injection multiple−quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (MOCVD). Characteristic temperature T₀ of 160 K at 20°C is obtained for 500−μm−long lasers. T₀ is measured as high as 88 K in the temperature range of 15−75°C. Cavity length dependence of T₀ is investigated.