Fabrication and Characterization of C₆₀-Based Organic Schottky Diodes

We have fabricated organic Schottky barrier diodes with Cu/LiF/C₆₀/Al andwiched construction. Cu and Al are selected as the cathode and the anode, respectively. C₆₀ is used as the organic layer and LiF as the buffer layer inserted between the cathode and C₆₀. After the annealing process, Schottky contact is well formed at the Al/C₆₀ interface and Ohmic contact is formed at the (Cu/LiF)/C₆₀ interface. The current density-voltage (J-V) measurements of the diodes present nonlinear behavior. As a result, the rectification ratio reaches 1×0³. The characteristics of the diodes have been analyzed using the energy band diagram. The values of Schottky barrier height Φ_B, ideality factor n and reverse saturation current density J_s are extracted according to the standard thermionic emission model.