Au/Pt/InGaN/GaN Heterostructure Schottky Prototype Solar Cell

A patterned Au/Pt/In_0.2Ga_0.8N/GaN heterostructure Schottky prototype solar cell is fabricated. The forward current-voltage characteristics indicate that thermionic emission is a dominant current transport mechanism at the Pt/InGaN interface in our fabricated cell. The Schottky solar cell has an open-circuit voltage of 0.91V, short-circuit current density of 7mA/cm², and fill factor of 0.45 when illuminated by a Xe lamp with a power density of 300mW/cm². It exhibits a higher short-circuit current density of 30mA/cm² and an external quantum efficiency of over 25% when illuminated by a 20-mW-power He-Cd laser.