Excellent Passivation of p-Type Si Surface by Sol-Gel Al2 O3 Films
1 Institute of Industrial Product Inspection, Chinese Academy of Inspection and Quarantine, Beijing 100123 2 Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, PO Box 2703, Beijing 100190
Received Date:
February 12, 2009
Published Date:
July 31, 2009
Abstract
Al2 O3 films with a thickness of about 100nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100cm/s is obtained on 10Ω·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2 O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx :H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2 O3 .
Article Text
References
[1]
Mulligan P. M et al 2004 Proceedings of the 19thEU-PVSEC (Paris WIP Renewable Energies, Munich) p 387
[2]
Hezel R and Jaeger K 1989 J. Electrochem. Soc. Am. 136 518
[3]
Hoex B et al 2006 Appl. Phys. Lett. 89 042112
[4]
Lucovvsky G PJC, Thorpe M F 2000 Proc. Char. Met.ULSI Tech. (Gaithersburg, MD, USA 26--29 June 2000) p 154
[5]
McIntosh K R et al 2008 Prog. Photovoltaics 16279
[6]
Masalski J et al 1999 Thin Solid Films 349 186
[7]
Yoldas B E 1975 J. Mater. Sci 10 1856
[8]
Yablanovitch E et al 1986 Phys. Rev. Lett. 57249
[9]
Agostinelli G et al 2006 Sol. Energy Mater. Sol.Cells 90 3438
[10]
Kerr M J and Cuevas A 2002 J. Appl. Phys. 912473
[11]
Glunz S W et al 1999 J. Appl. Phys. 86 683
[12]
Horanyi T S PT and Tutto 1993 Appl. Surf. Sci. 63 306
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About This Article
Cite this article:
XIAO Hai-Qing, ZHOU Chun-Lan, CAO Xiao-Ning, WANG Wen-Jing, ZHAO Lei, LI Hai-Ling, DIAO Hong-Wei. Excellent Passivation of p-Type Si Surface by Sol-Gel Al
2 O
3 Films[J].
Chin. Phys. Lett. , 2009, 26(8): 088102.
DOI: 10.1088/0256-307X/26/8/088102
XIAO Hai-Qing, ZHOU Chun-Lan, CAO Xiao-Ning, WANG Wen-Jing, ZHAO Lei, LI Hai-Ling, DIAO Hong-Wei. Excellent Passivation of p-Type Si Surface by Sol-Gel Al2 O3 Films[J]. Chin. Phys. Lett. , 2009, 26(8): 088102. DOI: 10.1088/0256-307X/26/8/088102
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