Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-SiC Films
School of Microelectronics, Xidian University, Xi'an 710071Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
Received Date:
May 03, 2009
Published Date:
July 31, 2009
Abstract
Heteroepitaxial growth of SiC on n-Si(111) substrates is performed by a low pressure chemical vapor deposition process. The effects of different carbonized temperature and carbonized time on the crystalline quality and the residual strain of 3C-SiC films are discussed. The results show that the residual strain is obviously reduced and the crystalline quality is greatly improved at the best carbonized temperature of 1000°C and the carbonized time of 5min. Under these optimized carbonization conditions, thick epitaxial films of about 15μm with good crystalline quality and low residual strain can be obtained.
Article Text
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About This Article
Cite this article:
CHEN Da, ZHANG Yu-Ming, ZHANG Yi-Men, WANG Yue-Hu, TANG Xiao-Yan. Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-SiC Films[J].
Chin. Phys. Lett. , 2009, 26(8): 086106.
DOI: 10.1088/0256-307X/26/8/086106
CHEN Da, ZHANG Yu-Ming, ZHANG Yi-Men, WANG Yue-Hu, TANG Xiao-Yan. Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-SiC Films[J]. Chin. Phys. Lett. , 2009, 26(8): 086106. DOI: 10.1088/0256-307X/26/8/086106
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