Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-SiC Films

Heteroepitaxial growth of SiC on n-Si(111) substrates is performed by a low pressure chemical vapor deposition process. The effects of different carbonized temperature and carbonized time on the crystalline quality and the residual strain of 3C-SiC films are discussed. The results show that the residual strain is obviously reduced and the crystalline quality is greatly improved at the best carbonized temperature of 1000°C and the carbonized time of 5min. Under these optimized carbonization conditions, thick epitaxial films of about 15μm with good crystalline quality and low residual strain can be obtained.