Spin-Orbit Splitting in Semiconductor Quantum Dots with a Two-Dimensional Ring Model
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Abstract
We present a theoretical study of the energy levels with two-dimensional ring confining potential in the presence of the Rashba spin-orbit interaction. The features of some low-lying states in various strengths of the Rashba spin-orbit interaction are investigated. The Rashba spin-orbit splitting can also be influenced by the width of the potential barrier. The computed results show that the spin-polarized electronic states can be more easily achieved in a weakly confined dot when the confinement strength for the Rashba spin-orbit interaction is larger than a critical value.
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FENG Jun-Sheng, LIU Zheng. Spin-Orbit Splitting in Semiconductor Quantum Dots with a Two-Dimensional Ring Model[J]. Chin. Phys. Lett., 2009, 26(8): 080305. DOI: 10.1088/0256-307X/26/8/080305
FENG Jun-Sheng, LIU Zheng. Spin-Orbit Splitting in Semiconductor Quantum Dots with a Two-Dimensional Ring Model[J]. Chin. Phys. Lett., 2009, 26(8): 080305. DOI: 10.1088/0256-307X/26/8/080305
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FENG Jun-Sheng, LIU Zheng. Spin-Orbit Splitting in Semiconductor Quantum Dots with a Two-Dimensional Ring Model[J]. Chin. Phys. Lett., 2009, 26(8): 080305. DOI: 10.1088/0256-307X/26/8/080305
FENG Jun-Sheng, LIU Zheng. Spin-Orbit Splitting in Semiconductor Quantum Dots with a Two-Dimensional Ring Model[J]. Chin. Phys. Lett., 2009, 26(8): 080305. DOI: 10.1088/0256-307X/26/8/080305
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