Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage
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Abstract
We present a density matrix approach for the theoretical description of an asymmetric double quantum dot (QD) system. The results show that the properties of gain, absorption and dispersion of the double QD system, the population of the state with one hole in one dot and an electron in another dot transferred by tunneling can be manipulated by a laser pulse or gate voltage. Our scheme may demonstrate the possibility of electro-optical manipulation of quantum systems.
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ZHAO Shun-Cai, LIU Zheng-Dong. Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage[J]. Chin. Phys. Lett., 2009, 26(7): 077802. DOI: 10.1088/0256-307X/26/7/077802
ZHAO Shun-Cai, LIU Zheng-Dong. Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage[J]. Chin. Phys. Lett., 2009, 26(7): 077802. DOI: 10.1088/0256-307X/26/7/077802
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ZHAO Shun-Cai, LIU Zheng-Dong. Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage[J]. Chin. Phys. Lett., 2009, 26(7): 077802. DOI: 10.1088/0256-307X/26/7/077802
ZHAO Shun-Cai, LIU Zheng-Dong. Manipulative Properties of Asymmetric Double Quantum Dots via Laser and Gate Voltage[J]. Chin. Phys. Lett., 2009, 26(7): 077802. DOI: 10.1088/0256-307X/26/7/077802
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