Field-Effect Transistor Based on Si with LaAlO_3-δ as the Source and Drain

N-type LaAlO_3-δ thin films are epitaxially grown on p-type Si substrates. An enhancement mode field-effect transistor is constructed with oxygen deficient LaAlO_3-δ as the source and drain, p-type Si as the semiconducting channel, and SiO₂ as the gate insulator, respectively. The typical current-voltage behavior with field-effect transistor characteristic is observed. The ON/OFF ratio reaches 14at a gate voltage of 10V, the field-effect mobility is 10cm²/V・s at a gate voltage of 2V, and the transconductance is 5×10^-6 A/V at a drain-source voltage of 0.8V at room temperature. The present field-effect transistor device demonstrates the possibility of realizing the integration of multifunctional perovskite oxides and the conventional Si semiconductor.