Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements

Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I-V) and capacitance-voltage (C-V) techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0.76eV obtained from the C-V measurements is higher than that of the value 0.70eV obtained from the I-V measurements. The series resistance R_S and the ideality factor n are determined from the d\ln(I)/dV plot and are found to be 193.62Ω and 1.34, respectively. The barrier height and the R_S value are calculated from the H(I)-I plot and are found to be 0.71eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density N_ss ranges from 6.484×10¹¹cm^-2eV^-1 in (E_C-0.446)eV to 2.801×10¹⁰cm^-2eV^-1 in (E_C-0.631,eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interfacial layer between the metal and the semiconductor.