Ultra-Thin Silicon Carbon Nitride Film: a Promising Protective Coating for Read/Write Heads in Magnetic Storage Devices
 
             
            
                    
                                        
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Abstract
    Ultra-thin amorphous Si-C-N films, down to 2nm, have been synthesized by MW-ECR plasma enhanced unbalanced magnetron sputtering. The friction coefficient of the film is only 0.11, determined in dry friction tests against the GCr15 ball at a load of 400mN for 20min. The films exhibit good protection against corrosion when they are immersed in a more severe corrosion environment of 0.1mol/L oxalic acid for 12h compared to the usual conditions (0.05mol/L, 4min) used in current computer industries. These good properties can be attributed to the smooth, dense and pore free structure of the film. These indicate that the Si-C-N film synthesized by the present technique may be a promising protective coating for read/write heads and other magnetic storage devices.
 
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                        GAO Peng, XU Jun, DING Wan-Yu, DONG Chuang. Ultra-Thin Silicon Carbon Nitride Film: a Promising Protective Coating for Read/Write Heads in Magnetic Storage Devices[J].  Chin. Phys. Lett., 2009, 26(6): 065203.  DOI: 10.1088/0256-307X/26/6/065203
                        
                            | GAO Peng, XU Jun, DING Wan-Yu, DONG Chuang. Ultra-Thin Silicon Carbon Nitride Film: a Promising Protective Coating for Read/Write Heads in Magnetic Storage Devices[J]. Chin. Phys. Lett., 2009, 26(6): 065203. DOI: 10.1088/0256-307X/26/6/065203 |  
 
 
                    
                        GAO Peng, XU Jun, DING Wan-Yu, DONG Chuang. Ultra-Thin Silicon Carbon Nitride Film: a Promising Protective Coating for Read/Write Heads in Magnetic Storage Devices[J]. Chin. Phys. Lett., 2009, 26(6): 065203. DOI: 10.1088/0256-307X/26/6/065203
                     
                        
                            | GAO Peng, XU Jun, DING Wan-Yu, DONG Chuang. Ultra-Thin Silicon Carbon Nitride Film: a Promising Protective Coating for Read/Write Heads in Magnetic Storage Devices[J]. Chin. Phys. Lett., 2009, 26(6): 065203. DOI: 10.1088/0256-307X/26/6/065203 |