Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra
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Abstract
Modulated photoluminescence spectra have been performed to investigate the impurity activation in MBE-grown As-doped Hg1-xCdxTe (x≈0.3). The results show that the doped As mainly acting as donors in the as-grown samples can be fully activated as AsTe by two-stage anneals of 285°C/16h + 240°C/48h, of which the ionization energy has been determined to be about 10.5meV, slightly smaller than that of intrinsic VHg (about 14.5meV). However, the higher activation temperature (e.g. 400°C) at the first-stage can produce large numbers of excessive VHg and seriously deteriorate the quality of epilayers. This could give a brief guideline for preparing extrinsic
p-type HgCdTe materials or devices.
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YUE Fang-Yu, CHEN Lu, WU Jun, HU Zhi-Gao, LI Ya-Wei, YANG Ping-Xiong, CHU Jun-Hao. Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra[J]. Chin. Phys. Lett., 2009, 26(4): 047804. DOI: 10.1088/0256-307X/26/4/047804
YUE Fang-Yu, CHEN Lu, WU Jun, HU Zhi-Gao, LI Ya-Wei, YANG Ping-Xiong, CHU Jun-Hao. Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra[J]. Chin. Phys. Lett., 2009, 26(4): 047804. DOI: 10.1088/0256-307X/26/4/047804
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YUE Fang-Yu, CHEN Lu, WU Jun, HU Zhi-Gao, LI Ya-Wei, YANG Ping-Xiong, CHU Jun-Hao. Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra[J]. Chin. Phys. Lett., 2009, 26(4): 047804. DOI: 10.1088/0256-307X/26/4/047804
YUE Fang-Yu, CHEN Lu, WU Jun, HU Zhi-Gao, LI Ya-Wei, YANG Ping-Xiong, CHU Jun-Hao. Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra[J]. Chin. Phys. Lett., 2009, 26(4): 047804. DOI: 10.1088/0256-307X/26/4/047804
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