Effects of NaN3 Added in Fe-C System on Inclusion and Impurity of Diamond Synthesized at High Pressure and High Temperature
-
Abstract
Effects of NaN3 added in Fe-C system to synthesize nitric diamond at high pressure and high temperature are investigated. Diamond crystals with high nitrogen concentration are synthesized by the system of Fe-C and NaN3 additive at pressure 5.8GPa and at temperatures 1750-1780K for 15min. The synthetic diamond crystals have a cubo-octahedral or octahedral shape with yellowish green or green colour. Some disfigurements are observed on the surfaces of most diamond crystals. The composition and content of inclusions formed by iron in diamond are changed and iron nitride is detected in diamond crystals synthesized with Fe-C-NaN3 additive. As the amount of NaN3 additive increases, Fe3C decreases and iron nitride increases with α-Fe being nearly constant. Moreover, the nitrogen concentrations in diamond crystals synthesized with 1.5wt% NaN3 additive is up to 2250ppm in substitutional form.
Article Text
-
-
-
About This Article
Cite this article:
LIANG Zhong-Zhu, LIANG Jing-Qiu, JIA Xiao-Peng. Effects of NaN3 Added in Fe-C System on Inclusion and Impurity of Diamond Synthesized at High Pressure and High Temperature[J]. Chin. Phys. Lett., 2009, 26(3): 038104. DOI: 10.1088/0256-307X/26/3/038104
LIANG Zhong-Zhu, LIANG Jing-Qiu, JIA Xiao-Peng. Effects of NaN3 Added in Fe-C System on Inclusion and Impurity of Diamond Synthesized at High Pressure and High Temperature[J]. Chin. Phys. Lett., 2009, 26(3): 038104. DOI: 10.1088/0256-307X/26/3/038104
|
LIANG Zhong-Zhu, LIANG Jing-Qiu, JIA Xiao-Peng. Effects of NaN3 Added in Fe-C System on Inclusion and Impurity of Diamond Synthesized at High Pressure and High Temperature[J]. Chin. Phys. Lett., 2009, 26(3): 038104. DOI: 10.1088/0256-307X/26/3/038104
LIANG Zhong-Zhu, LIANG Jing-Qiu, JIA Xiao-Peng. Effects of NaN3 Added in Fe-C System on Inclusion and Impurity of Diamond Synthesized at High Pressure and High Temperature[J]. Chin. Phys. Lett., 2009, 26(3): 038104. DOI: 10.1088/0256-307X/26/3/038104
|