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Modelling of Hot-Electron Energy in Short-Channel MOSFETs by Electrical Method

  • National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051

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  • Received Date: November 10, 2008
  • Published Date: February 28, 2009
    Abstract
  • Channel hot-electron (HE) energy in short-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is estimated based on electrical characterization. The HE assisted gate leakage is monitored, and its energy dependent tunnelling probability is calculated, from which the excess energy of HE is estimated. The credibility of the proposed method is supported by the experimental and theoretical results, and its accuracy in ultra-small-feature-size device application is also discussed.
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    • References (10)
  • [1] Toriumi A, Yoshimi M, Iwase M, Akiyama Y and Taniguchi K1987 IEEE Trans. Electron. Devices 34 1501
    [2] Sakamoto T, Kawaura H, Baba T and Iizuka T 1999 Appl.Phys. Lett. 75 1113
    [3] Takeda E, Yang C Y and Miura-Hamada A K 1995 HotCarrier Effects in MOS Devices (New York: Academic)
    [4] Mizuno T, Ohba R and Ohuchi K 1996 Appl. Phys. Lett. 69 106
    [5] Chung S S, Tseng Y H, Lai C S, Hsu Y Y, Ho E, Chen T, PengL C and Chu C H 2007 IEDM Tech. Dig. (Washington, DC,10--12 December 2007) s17p4 p 457
    [6] Zhang G, Hwang W S, Santosh M B, Lee S H, Cho B J and YooW J 2007 IEDM Tech. Dig. (Washington, DC, 10--12 December2007) s4p3 p 83
    [7] Kato K 1988 IEEE Trans. Electron. Devices 351344
    [8] Dimitrijev S 2000 Understanding SemiconductorDevices (New York: Oxford University Press)
    [9] Kawamura T, Sasago Y, Kurata H, Otsuga K, Noda S, KozakaiK and Kobayashi T 2005 VLSI Tech. Dig. (San Francisco, CA, USA17--19 June 2005) t11b2 206
    [10] Cassi D and Ricco B 1990 IEEE Trans. Electron.Devices 37 1514
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