GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(001) semi-insulating substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer are grown as buffer layers. The detectors containing a 200-period 2ML/8ML InAs/GaSb SL active layer are fabricated with a pixel area of 800×800μm² without using passivation or antireflection coatings. Corresponding to the 50% cutoff wavelengths of 2.05μm at 77K and 2.25μ,m at 300K, the peak detectivities of the detectors are 4×10⁹cm・Hz^1/2/W at 77K and 2×10⁸cm・Hz^1/2/W at 300K, respectively