Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots
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Abstract
We obtain low-density charged InAs quantum dots with an emission wavelength below 1μm using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340nm and 1000nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77K.
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WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song, NI Hai-Qiao, HE Zhen-Hong, DOU Xiu-Ming, NIU Zhi-Chuan. Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots[J]. Chin. Phys. Lett., 2009, 26(10): 107801. DOI: 10.1088/0256-307X/26/10/107801
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WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song, NI Hai-Qiao, HE Zhen-Hong, DOU Xiu-Ming, NIU Zhi-Chuan. Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots[J]. Chin. Phys. Lett., 2009, 26(10): 107801. DOI: 10.1088/0256-307X/26/10/107801
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WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song, NI Hai-Qiao, HE Zhen-Hong, DOU Xiu-Ming, NIU Zhi-Chuan. Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots[J]. Chin. Phys. Lett., 2009, 26(10): 107801. DOI: 10.1088/0256-307X/26/10/107801
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WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song, NI Hai-Qiao, HE Zhen-Hong, DOU Xiu-Ming, NIU Zhi-Chuan. Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots[J]. Chin. Phys. Lett., 2009, 26(10): 107801. DOI: 10.1088/0256-307X/26/10/107801
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