Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode

¹Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094 ²Department of Electronic and Electric Engineering, Nanyang Institute of Technology, Nanyang 473004

Received Date: March 29, 2009

Published Date: September 30, 2009

Abstract

The mathematical expression of the electron diffusion and drift length L_DE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting L_DE for L_D, the equivalent quantum efficiency equation of the reflection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode.

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