Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode
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Abstract
The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reflection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode.
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NIU Jun, YANG Zhi, CHANG Ben-Kang. Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode[J]. Chin. Phys. Lett., 2009, 26(10): 104202. DOI: 10.1088/0256-307X/26/10/104202
NIU Jun, YANG Zhi, CHANG Ben-Kang. Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode[J]. Chin. Phys. Lett., 2009, 26(10): 104202. DOI: 10.1088/0256-307X/26/10/104202
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NIU Jun, YANG Zhi, CHANG Ben-Kang. Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode[J]. Chin. Phys. Lett., 2009, 26(10): 104202. DOI: 10.1088/0256-307X/26/10/104202
NIU Jun, YANG Zhi, CHANG Ben-Kang. Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode[J]. Chin. Phys. Lett., 2009, 26(10): 104202. DOI: 10.1088/0256-307X/26/10/104202
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