A Closed-Form Model for Position-Dependent Potential across the Channel in DG-MOSFETs

A closed-form model for electrostatic potential distribution in the direction normal to the channel for double-gate (DG) MOSFETs is presented. The effects of doping (N_A for nMOS) and minority carriers both are taken into account for the first time, in solving Poisson's equation analytically. Excellent agreement between model-predicted results and numerical device simulation is achieved for a wide range of body thickness, light or high channel-doping, under various bias conditions. This complete closed form for position-dependent potential distribution has wide applications for MOS compact modelling and device design.