Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy
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WANG Hai-Li,
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WU Dong-Hai,
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WU Bing-peng,
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NI Hqiao-Qiao,
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HUANG She-Song,
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XIONG Yong-Hua,
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WANG Peng-Fei,
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HAN Qin,
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NIU Zhi-Chuan,
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I.Tångring,
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S. M. Wang
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Abstract
We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm2 ridge waveguide laser, the lasing wavelength is centred at 1.508μm and the threshold current density is 667A/cm2 under pulsed operation. The pulsed lasers can operate up to 286K.
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WANG Hai-Li, WU Dong-Hai, WU Bing-peng, NI Hqiao-Qiao, HUANG She-Song, XIONG Yong-Hua, WANG Peng-Fei, HAN Qin, NIU Zhi-Chuan, I.Tångring, S. M. Wang. Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy[J].
Chin. Phys. Lett., 2009, 26(1): 014214.
DOI: 10.1088/0256-307X/26/1/014214
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WANG Hai-Li, WU Dong-Hai, WU Bing-peng, NI Hqiao-Qiao, HUANG She-Song, XIONG Yong-Hua, WANG Peng-Fei, HAN Qin, NIU Zhi-Chuan, I.Tångring, S. M. Wang. Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2009, 26(1): 014214. DOI: 10.1088/0256-307X/26/1/014214
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WANG Hai-Li, WU Dong-Hai, WU Bing-peng, NI Hqiao-Qiao, HUANG She-Song, XIONG Yong-Hua, WANG Peng-Fei, HAN Qin, NIU Zhi-Chuan, I.Tångring, S. M. Wang. Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2009, 26(1): 014214. DOI: 10.1088/0256-307X/26/1/014214
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WANG Hai-Li, WU Dong-Hai, WU Bing-peng, NI Hqiao-Qiao, HUANG She-Song, XIONG Yong-Hua, WANG Peng-Fei, HAN Qin, NIU Zhi-Chuan, I.Tångring, S. M. Wang. Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2009, 26(1): 014214. DOI: 10.1088/0256-307X/26/1/014214
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