Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiN_x/nc-Si/a-SiN_x Structures

The a-SiN_x/nanocrystalline silicon (nc-Si)/a-SiN_x sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on p-type Si substrates. The nc-Si layer in
thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer deposition technique. The thicknesses of tunnel and control SiN_x layers are 3nm and 20nm, respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures. Distinct frequency-dependent capacitance peaks due to electrons tunnelling into the nc-Si dots and capacitance-voltage (C-V)
hysteresis characteristic due to electrons storage in the nc-Si dots are observed with the same sample. Moreover, conductance peaks have also been observed at the same voltage region by conductance-voltage (G-V) measurements. The experimental results demonstrate that electrons can be loaded onto nc-Si dots via resonant tunnelling and can be stored in our a-SiN_x/nc-Si/a-SiN_x structures.