Detailed Characteristics of Expansion Velocity of Si from Laser Ablated SiC
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Abstract
Optical emission of plasma is used to investigate the characteristics of dynamics distribution in the plume generated by ablation of a SiC sample using Nd:YAG laser. The plume expansion dynamics is characterized by time-of-flight measurement. We find that the profiles of Si (I) (390.55nm) split
into two components and the Si (II) (634.71nm) spectra show two distinct expansion dynamics regions. The time-of-flight measurement of Si(II) (634.71nm) under different laser irradiance conditions, from 0.236GW/cm2 to 1.667GW/cm2, are presented and discussed.
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