Spin Splitting in In0.53Ga0.47As/InP Heterostructures
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Abstract
Spin-orbit coupling in a gate-controlled In0.53Ga0.47As/InP quantum well is
investigated in the presence of a large Zeeman effect. We develop a Fourier-transform fitting procedure to extract the zero-field spin-splitting Rashba parameter α. The bare g factor value is found to be of the order of 3 from magnetotransport measurements in tilted magnetic fields. It is found that both Zeeman splitting and Rashba splitting play important roles in determining the total spin splitting in In0.53Ga0.47As.
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