Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory

In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260nm is fabricated with standard 0.18μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device using this seamless sub-micro W heating electrode. The results show good electrical performance, e.g. the reset current of 1.3mA and the set/reset cycle up to 10⁹ have been achieved.