Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots
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Abstract
Self-assembled quantum dots capping with a GaAs/Gasb combined strain-reduced layer (CSRL) are grown by MBE. Their structural and optical properties are investigated by AFM and photoluminescence (PL). PL measurements have shown that stronger emission about 1.3μm can be
obtained by Sb irradiation and capping QDs with 3ML GaAs/2ML GaSb CSRL at room temperature. The full width at half maximum (FWHM) of the PL spectrum is about 20.2meV (19.9meV) at room temperature (20K), indicating that the QDs have high uniform, The result of FWHM is much better than the recently reported result, which is due to the fact that lower QD growth rate and growth interruption after the QDs deposition are adopted in our experiments. -
References
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