In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure
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Abstract
An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (DAC) for resistivity measurement under high pressure. The resistivity of nanocrystal ZnS is measured under high pressure up to 36.4GPa by using designed DAC. The reversibility and hysteresis of the phase transition are observed. The experimental data is confirmed by an electric current field analysis accurately. The method used here can also be used under both ultrahigh pressure and high temperature conditions.
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HAN Yong-Hao, LUO Ji-Feng, HAO Ai-Min, GAO Chun-Xiao, XIE Hong-Sen, QU Sheng-Chun, LIU Hong-Wu, ZOU Guang-Tian. In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure[J]. Chin. Phys. Lett., 2005, 22(4): 927-930.
HAN Yong-Hao, LUO Ji-Feng, HAO Ai-Min, GAO Chun-Xiao, XIE Hong-Sen, QU Sheng-Chun, LIU Hong-Wu, ZOU Guang-Tian. In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure[J]. Chin. Phys. Lett., 2005, 22(4): 927-930.
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HAN Yong-Hao, LUO Ji-Feng, HAO Ai-Min, GAO Chun-Xiao, XIE Hong-Sen, QU Sheng-Chun, LIU Hong-Wu, ZOU Guang-Tian. In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure[J]. Chin. Phys. Lett., 2005, 22(4): 927-930.
HAN Yong-Hao, LUO Ji-Feng, HAO Ai-Min, GAO Chun-Xiao, XIE Hong-Sen, QU Sheng-Chun, LIU Hong-Wu, ZOU Guang-Tian. In-Situ Resistivity Measurement of ZnS in Diamond Anvil Cell under High Pressure[J]. Chin. Phys. Lett., 2005, 22(4): 927-930.
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