Interfacial Structure Between Epitaxial Diamond Films and Silicon Substrates

Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament. The orientation relationship of epitaxial diamond films on silicon substrate has been investigated by cross-sectional high-resolution transmission electron microscopy We found one excellent epitaxial configuration and according to the experimental result we suggest a corresponding model. The lattice misfit is only 0.1-2.8% related to our model and the analysis of 60°type interface dislocation also supports this model.