Oxygen Pressure Dependence of Properties of Epitaxial LaAlO₃ Films Grown on Si (100)

Heteroepitaxial LaAlO₃ films were grown on a SrTiO₃/Si (100) substrate by laser molecular beam epitaxy under different oxygen pressures, and their properties such as crystallinity and electrical characteristics were experimentally investigated using the various measurement methods. The results show that most properties depend mainly on the deposition oxygen pressure. The crystallinity and the C-V and I-V characteristics can be greatly improved with the increasing oxygen deposition pressure. Moreover, after annealed at 1050°C in N₂ ambient, the C-V and I-V characteristics of LAO films deposited at the lower oxygen pressure are also improved due to the decrease of oxygen vacancies in LAO films.