Structure Properties of MgxZn1-xO Films Deposited at Low Temperature
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Abstract
MgxZn1-xO films (x=0.23) have been prepared on silicon substrates by radio-frequency magnetron sputtering at 80°C. The structure properties of MgxZn1-xO films are studied using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy and Raman spectra. The analysis of XRD and HRTEM indicates that the MgxZn1-xO films have hexagonal wurtzite single-phase structures and a preferred orientation with the c axis perpendicular to the substrates. Raman spectra of ZnO and MgxZn1-xO films reveal that the MgxZn1-xO films have not only the hexagonal wurtzite structure but also higher crystalline quality than ZnO films.
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