Fabrication of Single Crystalline Silicon on Glass by Smart-Cut Technique
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Abstract
Single crystalline silicon films are transferred on to a glass substrate by the smart-cut technique, which is based on H+ ions implantation, anodic bonding and layer transfer. Structures of the resulting thin film silicon on glass (SOG) are characterized by transmission-electron microscopy, scanning electron microscopy and Raman spectroscopy. The results show that SOG substrates fabricated by the smart-cut have advantages of steep top Si/glass interface and good monocrystalline Si quality. The Hall-effect measurement indicates that the single crystalline SOG substrates have a better electrical property compared with polycrystalline silicon SOG substrates.
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SONG Hua-Qing, SHI Jing, ZHANG Miao, LIN Qing, LIN Cheng-Lu. Fabrication of Single Crystalline Silicon on Glass by Smart-Cut Technique[J]. Chin. Phys. Lett., 2003, 20(1): 108-110.
SONG Hua-Qing, SHI Jing, ZHANG Miao, LIN Qing, LIN Cheng-Lu. Fabrication of Single Crystalline Silicon on Glass by Smart-Cut Technique[J]. Chin. Phys. Lett., 2003, 20(1): 108-110.
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SONG Hua-Qing, SHI Jing, ZHANG Miao, LIN Qing, LIN Cheng-Lu. Fabrication of Single Crystalline Silicon on Glass by Smart-Cut Technique[J]. Chin. Phys. Lett., 2003, 20(1): 108-110.
SONG Hua-Qing, SHI Jing, ZHANG Miao, LIN Qing, LIN Cheng-Lu. Fabrication of Single Crystalline Silicon on Glass by Smart-Cut Technique[J]. Chin. Phys. Lett., 2003, 20(1): 108-110.
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