Preparation and Transparent Property of the n-ZnO/p-Diamond Heterostructure

Heterostructures of an n-type ZnO film/p-type diamond film on the 111 crystalline diamond substrate have been prepared for the first time. The electrodes of the n- and p-type semiconductors are experimentally verified to be ohmic. The diode shows a good rectification characteristic and the ratio of forward current to the reverse current exceeded 200 within the range of applied voltages of -2 to +2 V. The turn-on voltage of the diode is 0.34 V and the highest current is about 5.0 mA as the forward voltage reaches 2 V. Moreover, the diode is optically transparent in the region of 500-700 nm wavelength.