Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application

Thermal stability of resistive switching of stoichiometric zirconium oxide thin films is investigated for high yielding nonvolatile memory application. The
Al/ZrO₂/Al cell fabricated in the conventional device process shows highly reliable switching behaviour between two distinct stable resistance states. The retention capabilities are also tested under various conditions and temperatures. The excellent performance of Al/ZrO₂/Al cell can be explained by assuming that anode/ZrO₂ interface exists and by conducting filament
forming/rupture mechanism. The device failure is illustrated in terms of permanent conducting filaments formation.