Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors
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Abstract
We introduce a one-dimensional spin injection structure comprising a ferromagnetic metal and a nondegenerate organic semiconductor to model electric current polarizations. With this model we analyse spin Coulomb dragging (SCD) effects on the polarization under various electric fields, interface and conductivity conditions. The results show that the SCD inhibits the current polarization. Thus the SCD inhibition should be well considered for accurate evaluation of current polarization in the design of organic spin devices.
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ZHAO Jun-Qing, QIAO Shi-Zhu, JIA Zhen-Feng, ZHANG Ning-Yu, JI Yan-Ju, PANG Yan-Tao, CHEN Ying, FU Gang. Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors[J]. Chin. Phys. Lett., 2008, 25(12): 4381-4384.
ZHAO Jun-Qing, QIAO Shi-Zhu, JIA Zhen-Feng, ZHANG Ning-Yu, JI Yan-Ju, PANG Yan-Tao, CHEN Ying, FU Gang. Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors[J]. Chin. Phys. Lett., 2008, 25(12): 4381-4384.
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ZHAO Jun-Qing, QIAO Shi-Zhu, JIA Zhen-Feng, ZHANG Ning-Yu, JI Yan-Ju, PANG Yan-Tao, CHEN Ying, FU Gang. Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors[J]. Chin. Phys. Lett., 2008, 25(12): 4381-4384.
ZHAO Jun-Qing, QIAO Shi-Zhu, JIA Zhen-Feng, ZHANG Ning-Yu, JI Yan-Ju, PANG Yan-Tao, CHEN Ying, FU Gang. Spin Coulomb Dragging Inhibition of Spin-Polarized Electric Current Injecting into Organic Semiconductors[J]. Chin. Phys. Lett., 2008, 25(12): 4381-4384.
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