Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant-tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage (I-V) curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I-V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.