Two-Wave Mixing in Resonant Photorefractive GaAs/AlGaAsSemi-insulating Multiple Quantum Wells

We have observed the two-wave mixing of the photorefractive GaAs/AIGaAs semiinsulating multiple quantum wells fabricated by film lift-off approach and proton implanting technique. Under the non-optimized condition, we have obtained the two-wave mixing gain larger than 180cm^-1 at wavelength near 784nm for a field of 10kV/cm. Energy transfer is also observed when the applied field is perpendicular to the grating vector.