DEEP TRAPS IN a-Si:H MEASURED BY INFRARED STIMULATED CURRENT

Silicon dangling bond(DB) is widely accepted as recombination center in a-Si:H. This is true at room temperature. We measured the Infrared Stimulated Current(IRSC) in the temperature range of 86-260K. and focused on the PC onset overshoot for both undoped and P-doped samples. The results show that DB also acts as electron trap, especially at low temperature.